Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon

ISO 17560:2002 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal or amorphous-silicon specimens with boron atomic concentrations between 1×10¹⁶ atoms/cm³ and 1×10²⁰ atoms/cm³, and to crater depths of 50 nm or deeper.